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| 1 mrf9030lr1 MRF9030LSR1 motorola rf device data the rf sub - micron mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. ? typical two - tone performance at 945 mhz, 26 volts output power ? 30 watts pep power gain ? 19 db efficiency ? 41.5% imd ? - 32.5 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 945 mhz, 30 watts cw output power ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. ? low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain - source voltage v dss 68 vdc gate - source voltage v gs - 0.5, + 15 vdc total device dissipation @ t c = 25 c mrf9030lr1 derate above 25 c MRF9030LSR1 p d 92 0.53 117 0.67 watts w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case mrf9030lr1 MRF9030LSR1 r jc 1.9 1.5 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf9030/d motorola semiconductor technical data mrf9030lr1 MRF9030LSR1 945 mhz, 30 w, 26 v lateral n - channel broadband rf power mosfets case 360b - 05, style 1 ni - 360 mrf9030lr1 case 360c - 05, style 1 ni - 360s MRF9030LSR1 ? motorola, inc. 2003 rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9030lr1 MRF9030LSR1 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 250 madc) v gs(q) ? 3.8 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 0.7 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 3 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 49.5 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 26.5 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1 ? pf (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 3 mrf9030lr1 MRF9030LSR1 motorola rf device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) two - tone common - source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 18 19 ? db two - tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 37 41.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? - 32.5 -28 dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? - 15.5 -9 db two - tone common - source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 19 ? db two - tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 41.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? -33 ? dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? -14 ? db power output, 1 db compression point (v dd = 26 vdc, p out = 30 w cw, i dq = 250 ma, f1 = 945.0 mhz) p 1db ? 30 ? w common - source amplifier power gain (v dd = 26 vdc, p out = 30 w cw, i dq = 250 ma, f1 = 945.0 mhz) g ps ? 19 ? db drain efficiency (v dd = 26 vdc, p out = 30 w cw, i dq = 250 ma, f1 = 945.0 mhz) ? 60 ? % output mismatch stress (v dd = 26 vdc, p out = 30 w cw, i dq = 250 ma, f = 945.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . mrf9030lr1 MRF9030LSR1 4 motorola rf device data z11 c17 figure 1. 945 mhz broadband test circuit schematic rf input rf output z1 z2 v gg c1 l1 v dd b1 short ferrite bead b2 long ferrite bead c1, c8, c13, c14 47 pf chip capacitors, b case c2, c4 0.8 pf to 8.0 pf trim capacitors c3 3.9 pf chip capacitor, b case c5, c6 7.5 pf chip capacitors, b case c7, c15, c16 10 f, 35 v tantalum capacitors c9, c10 10 pf chip capacitors, b case c11 9.1 pf chip capacitor, b case c12 0.6 pf to 4.5 pf trim capacitor c17 220 f, 50 v electrolytic capacitor l1, l2 12.5 nh surface mount inductors z1 0.260 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.215 x 0.270 microstrip z5 0.315 x 0.270 microstrip z6 0.160 x 0.270 x 0.520 , taper z7 0.285 x 0.520 microstrip z8 0.140 x 0.270 microstrip z9 0.450 x 0.270 microstrip z10 0.250 x 0.060 microstrip z11 0.720 x 0.060 microstrip z12 0.490 x 0.060 microstrip z13 0.290 x 0.060 microstrip pcb taconic rf - 35 - 0300, 30 mil, r = 3.55 z3 z8 z9 z7 z5 z6 l2 b2 z4 z10 c15 figure 2. 945 mhz broadband test circuit component layout b1 c1 c2 c3 c5 c7 c8 c9 c10 c6 c11 c12 c13 c14 c15 c16 c17 l1 l2 rev ?02 900 mhz mrf9030 c7 c2 c5 c16 c9 z12 z13 c4 c13 cut out area + +++ dut c8 c14 c3 c4 c6 c10 c11 c12 v gg v dd rf input rf output f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 5 mrf9030lr1 MRF9030LSR1 motorola rf device data typical characteristics 960 12 20 930 ?38 50 irl g ps imd v dd = 26 vdc p out = 30 w (pep) i dq = 250 ma two ?tone, 100 khz tone spac? ing f, frequency (mhz) figure 3. class ab broadband circuit performance g ps , power gain (db) intermodulation distortion (dbc) imd, , drain efficiency (%) 19 45 18 40 17 35 16 ?30 15 ?32 14 ?34 13 ?36 955 950 945 940 935 ?18 ?10 ?12 ?14 ?16 input return loss (db) irl, 100 17 20 1 i dq = 375 ma 300 ma v dd = 26 vdc f1 = 945 mhz, f2 = 945.1 mhz p out , output power (watts) pep figure 4. power gain versus output power g ps , power gain (db) 19.5 19 18.5 18 17.5 10 250 ma 200 ma 100 ?60 ?50 1 i dq = 200 ma 300 ma v dd = 26 vdc f1 = 945 mhz, f2 = 945.1 mhz p out , output power (watts) pep figure 5. intermodulation distortion versus output power intermodulation distortion (dbc) imd, ?20 ?30 ?40 10 375 ma 250 ma 100 ?70 0 1 3rd order v dd = 26 vdc i dq = 250 ma f1 = 945 mhz, f2 = 945.1 mhz p out , output power (watts) pep figure 6. intermodulation distortion products versus output power intermodulation distortion (dbc) imd, 10 ?10 ?20 ?30 ?40 ?50 ?60 5th order 7th order 100 10 22 0.1 0 60 g ps v dd = 26 vdc i dq = 250 ma f = 945 mhz p out , output power (watts) avg. figure 7. power gain and efficiency versus output power g ps , power gain (db) , drain efficiency (%) 20 50 18 40 16 30 14 20 12 10 10 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . mrf9030lr1 MRF9030LSR1 6 motorola rf device data 100 8 20 1 ?60 60 g ps imd p out , output power (watts) pep figure 8. power gain, efficiency and imd versus output power g ps , power gain (db) , drain efficiency (%) 18 40 16 20 14 0 12 ?20 10 ?40 10 intermodulation distortion (dbc) imd, v dd = 26 vdc i dq = 250 ma f1 = 945 mhz, f2 = 945.1 mhz f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 7 mrf9030lr1 MRF9030LSR1 motorola rf device data f mhz z source ? z load ? 930 945 960 1.34 - j0.1 1.4 - j0.14 1.36 - j0.2 3.175 + j0.09 3.1 + j0.08 3.0 + j0.05 v dd = 26 v, i dq = 250 ma, p out = 30 w pep figure 9. series equivalent input and output impedance f = 960 mhz z o = 5 ? f = 930 mhz f = 930 mhz f = 960 mhz z source z load z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . mrf9030lr1 MRF9030LSR1 8 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 9 mrf9030lr1 MRF9030LSR1 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . mrf9030lr1 MRF9030LSR1 10 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 11 mrf9030lr1 MRF9030LSR1 motorola rf device data package dimensions case 360b - 05 issue f ni - 360 mrf9030lr1 g e c seating plane dim a min max min max millimeters 0.795 0.805 20.19 20.45 inches b 0.225 0.235 5.72 5.97 c 0.125 0.175 3.18 4.45 d 0.210 0.220 5.33 5.59 e 0.055 0.065 1.40 1.65 f 0.004 0.006 0.10 0.15 g 0.562 bsc 14.28 bsc h 0.077 0.087 1.96 2.21 k 0.220 0.250 5.59 6.35 m 0.355 0.365 9.02 9.27 q 0.125 0.135 3.18 3.43 style 1: pin 1. drain 2. gate 3. source 1 2 3 q 2x m a m aaa b m t notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. r 0.227 0.233 5.77 5.92 s 0.225 0.235 5.72 5.97 n 0.357 0.363 9.07 9.22 aaa 0.005 ref 0.13 ref bbb 0.010 ref 0.25 ref ccc 0.015 ref 0.38 ref m a m bbb b m t d 2x k 2x b b (flange) h f m a m ccc b m t m a m bbb b m t a m (insulator) a t n (lid) m a m ccc b m t r (lid) s (insulator) m a m aaa b m t case 360c - 05 issue d ni - 360s MRF9030LSR1 style 1: pin 1. drain 2. gate 3. source dim a min max min max millimeters 0.375 0.385 9.53 9.78 inches b 0.225 0.235 5.72 5.97 c 0.105 0.155 2.67 3.94 d 0.210 0.220 5.33 5.59 e 0.035 0.045 0.89 1.14 f 0.004 0.006 0.10 0.15 h 0.057 1.45 k 0.085 0.115 2.16 2.92 m 0.355 0.365 9.02 9.27 e c seating plane 2 0.067 1.70 1 notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. s 0.225 0.235 5.72 5.97 aaa 0.005 ref 0.13 ref bbb 0.010 ref 0.25 ref ccc 0.015 ref 0.38 ref h f m a m ccc b m t r (lid) s (insulator) m a m aaa b m t m a m bbb b m t d 2x b b (flange) m a m ccc b m t m a m bbb b m t m (insulator) t n (lid) a (flange) a k 2x pin 3 n 0.357 0.363 9.07 9.22 r 0.227 0.23 5.77 5.92 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . mrf9030lr1 MRF9030LSR1 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2003 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors mrf9030/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . |
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